Повышение радиационной стойкости интегральных схем на основе биполярных транзисторов обработкой в водородной электронно циклотронно резонансной плазме и геттерированием Si-пластин

We demonstrate significant improvement of the radiation immunity integrated circuits based on silicon bipolar transistors. Strong decrease current gain degradation and yield after high-energy gamma irradiation are both shown. This was achieved by development efficient hydrogenation process for bulk surface dielectric layer using electron cyclotron resonance (ECR) plasma, as well implementation effective Si-plate gettering option.